EBAC-RCI

Find exact location of any open, resistive or shorting defect
Trouver la position exacte de tout défaut de circuit ouvert, résistif ou court-circuit

Find exact location of any open, resistive or shorting defect

  • Localize metal line cuts caused by cracking, corrosion, electro-migration, or foreign particles.
  • Identify resistive opens caused by interface contamination at via interconnects.
  • Pinpoint location for direct TEM lamella FIB preparation.

Characterize CMOS interconnects with highest resolution

  • Reveal electrical integrity of nets with sub-micron lateral resolution and bridge from EFA to PFA
  • Diagnose fabrication and long term issues, including contamination, metal patterning defects, resistive interconnectors, or electro-migration.
  • Directly isolate defects to the exact layer and die location and improve time to product improvement actions.
Vérification des modes d’opérations des composants avec le contraste de tension intégré
Localisation des défauts dans les couches minces d’oxydes

Verify device operation modes with built- in biasing and live overlay.

  • Image junctions and fields in delayered operating devices.
  • Map electrical activity of solar cells under bias.
  • Compare imaged behaviour with device modelling.

Localize defects in thin dielectric layers

  • Visualise and localise weaknesses in gate oxide (GOX) and capacitor oxide (COX) before breakdown.
  • Pinpoint oxide shorts caused by ESD or EOS with sub-micron resolution.
  • Preserve the original defect signature with power dissipation in the lower nW range during localization.
Localisation des défauts dans les couches minces d’oxydes
Accès aux défaillances invisibles par contraste de tension

Access failures invisible in voltage contrast

  • Find low resistances that allows charge tunnelling trough the interconnects.
  • Investigate structures in contact with the silicon substrate.
  • Characterize large metal structures.