[custom_headline type=”left” level=”h1″ looks_like=”h2″]EBAC-RCI[/custom_headline]
Find exact location of any open, resistive or shorting defect
Find exact location of any open, resistive or shorting defect
- Localize metal line cuts caused by cracking, corrosion, electro-migration, or foreign particles.
- Identify resistive opens caused by interface contamination at via interconnects.
- Pinpoint location for direct TEM lamella FIB preparation.
Characterize CMOS interconnects with highest resolution
- Reveal electrical integrity of nets with sub-micron lateral resolution and bridge from EFA to PFA
- Diagnose fabrication and long term issues, including contamination, metal patterning defects, resistive interconnectors, or electro-migration.
- Directly isolate defects to the exact layer and die location and improve time to product improvement actions.
Verify device operation modes with built- in biasing and live overlay.
- Image junctions and fields in delayered operating devices.
- Map electrical activity of solar cells under bias.
- Compare imaged behaviour with device modelling.
Localize defects in thin dielectric layers
- Visualise and localise weaknesses in gate oxide (GOX) and capacitor oxide (COX) before breakdown.
- Pinpoint oxide shorts caused by ESD or EOS with sub-micron resolution.
- Preserve the original defect signature with power dissipation in the lower nW range during localization.
Access failures invisible in voltage contrast
- Find low resistances that allows charge tunnelling trough the interconnects.
- Investigate structures in contact with the silicon substrate.
- Characterize large metal structures.
